Structural & Electrical Properties of CdTe/Si Heterojunction Prepared by Flash Evaporation Technique
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Abstract
The present study is on the optoelectronic properties of CdTe/Si
heterojunction photodetector made by deposition of CdTe by flash evaporation
technique on clean monocrystalline phase of Si. Electrical and structural
properties of grown CdTe film were investigated. The CdTe/Si junction exhibits
fair diode rectification and the soft breakdown occurred at VB>2 V. Dark I–V
characteristics of the CdTe/Si photodetector are examined at room temperature.
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Structural & Electrical Properties of CdTe/Si Heterojunction Prepared by Flash Evaporation Technique. (2022). Journal of the College of Basic Education, 16(63), 61-67. https://doi.org/10.35950/cbej.vi.7317
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Articles for the humanities and pure sciences
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How to Cite
Structural & Electrical Properties of CdTe/Si Heterojunction Prepared by Flash Evaporation Technique. (2022). Journal of the College of Basic Education, 16(63), 61-67. https://doi.org/10.35950/cbej.vi.7317