Study the effect of annealing temperature on the electron transitions of SnO 2 films. doped with (Ag 2 O) prepared by precipitation Thermal chemical

Abstract

Thin Ag 2 O doped SnO 2 films and SnO 2 films were prepared.

by weight (3%, 5%) using the thermal chemical deposition method on bases of

Borosilicate glass at a temperature (500 ºC).

The X-ray diffraction pattern of the films prepared at different temperatures was studied.
annealing (540, 580, 620) ºC, as the results of x-ray diffraction showed that

The membranes have a polycrystalline structure.
The study included the effect of annealing temperature on the forbidden energy gap of transitions.
direct electronic, as it was found that an increase in the annealing temperature caused a decrease in the gap

banned energy.